The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2007

Filed:

Nov. 30, 2004
Applicants:

Yoshitaka Nakamura, Tokyo, JP;

Tsuyoshi Kawagoe, Tokyo, JP;

Hiroshi Sakuma, Tokyo, JP;

Isamu Asano, Tokyo, JP;

Keiji Kuroki, Tokyo, JP;

Hidekazu Goto, Tokyo, JP;

Shinpei Iijima, Tokyo, JP;

Inventors:

Yoshitaka Nakamura, Tokyo, JP;

Tsuyoshi Kawagoe, Tokyo, JP;

Hiroshi Sakuma, Tokyo, JP;

Isamu Asano, Tokyo, JP;

Keiji Kuroki, Tokyo, JP;

Hidekazu Goto, Tokyo, JP;

Shinpei Iijima, Tokyo, JP;

Assignee:

Elpida Memory, Inc., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.


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