Hitachi, Ltd.

Elpida Memory, Inc.

Other

Kinugawa Rubber Industrial Co., Ltd.

Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Hiroshi Sakuma

Isamu Asano

Yoshitaka Nakamura

Hidekazu Goto

Satoru Yamada

Hideo Aoki

Tsuyoshi Tamaru

Shinpei Iijima

Keizo Kawakita

Naoki Fukuda

Masayoshi Hirasawa

Katsuhiko Tanaka

Kenichi Koyanagi

Tsuyoshi Kawagoe

Keiji Kuroki

Satoshi Yamamoto

Shuhei Yamamoto

Masanori Fujita

Yasuhiro Shimamoto

Toshihide Nabatame

Masahiko Hiratani

Yuichi Matsui

Masafumi Hoshino

Mitsuhiro Horikawa

Takakazu Fukuchi

Shunichi Motte

Teruo Ebihara

Toshio Ando

Naotoshi Shino

Osamu Yamazaki

Kaori Takano

Shigeru Sembonmatsu

Noriaki Eto

Shinichiro Nagase

Yuuji Sakamaki

Hisao Nakahara

A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.

Method for forming a metal oxide film

Provided is a method for manufacturing a semiconductor device, including a dual-stage deposition step including: a first stage for introducing tantalum penta-ethoxide containing tantalum as a material gas into a reaction chamber in which a semiconductor substrate on a surface of which a lower electrode is made of ruthenium is placed to thus form a tantalum oxide film by a vapor-phase growth method such as a chemical vapor deposition method and the following second stage for removing from the reaction chamber the material gas introduced into the reaction chamber at the first stage and a byproduct produced at the first stage by introducing a nitrogen gas, and wherein the tantalum oxide film is formed on the semiconductor substrate, by repeating the dual-stage deposition step two or more times.

ALD process for capacitor dielectric

A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.

Fabricating method of semiconductor integrated circuits

A semiconductor device includes memory cells each having an MISFET for memory selection formed on one major surface of a semiconductor substrate and a capacitive element comprised of a lower electrode electrically connected at a bottom portion to one of a source and drain of the MISFET for memory selection via a first metal layer and an upper electrode formed on the lower electrode via a capacitive insulating film. The lower electrode has a thickness of 30 nm or greater at the bottom portion thereof. Sputtering with a high ionization ratio and high directivity, such as PCM, is adapted to the formation of the lower electrode to make only the bottom portion of a capacitor thicker.

Memory with memory cells that include a MIM type capacitor with a lower electrode made for reduced resistance at an interface with a metal film

After an upper electrode protective film is formed such that it is in a firm contact with ruthenium film of the upper electrode without damaging the ruthenium film, the upper electrode is etched, thereby, a MIM capacitor is obtained in which leak current is not increased due to oxidation of the ruthenium film of the upper electrode.

Manufacturing method of semiconductor device

The semiconductor device is formed according to the following steps. A TiN filmand a W filmare deposited on a silicon oxide filmincluding the inside of a via-holeby the CVD method and thereafter, the W filmand TiN filmon the silicon oxide filmare etched back to leave only the inside of the via-holeand form a plug. Then, a TiN film, Al-alloy film, and Ti filmare deposited on the silicon oxide filmincluding the surface of the plugby the sputtering method and thereafter, the Ti film, Al-alloy film, and TiN filmare patterned to form second-layer wiringsand

Semiconductor integrated circuit device having a conductive film which contains metal atoms bondable to a halogen element

A semiconductor integrated circuit device includes a plurality of capacitor elements, which are separated from each other by a first insulating film on a plane. Each of the plurality of capacitor elements has a lower electrode, a dielectric film, and an upper electrode, and the lower electrode has a crown structure. At least one of the lower electrode and the upper electrode has a laminate structure composed of a plurality of conductive films. An outermost film of the laminate structure on a side of the dielectric film is a ruthenium film, and a portion of the laminate structure other than the outermost film has higher selective growth than the first insulating film with respect to the ruthenium film. Here, the first insulating film is desirably a tantalum oxide film.

Semiconductor integrated circuit device with capacitor of crown structure and method of manufacturing the same

Method for fabricating semiconductor integrated circuit

In a semiconductor integrated circuit device, a polycrystalline silicon film is formed along an inner wall of a trench in which a capacitor is to be formed, and the polycrystalline silicon film and a lower electrode is contacted to each other on the entire inner wall of the trench. Oxygen permeated into the lower electrode during a thermal treatment of a tantalum oxide film is consumed at an interface between the polycrystalline silicon film and the lower electrode. Thus, oxygen does not reach the surface of a silicon plug below the lower electrode that would cause oxidation on the surface of the silicon plug and form a high-resistance oxide layer when a dielectric film formed on a lower electrode of a capacitor of a DRAM is subjected to a thermal treatment in an oxygen atmosphere.

Semiconductor integrated circuit device and manufacturing method which avoids oxidation of silicon plug during thermal treatment of capacitor insulating film

In a semiconductor integrated circuit device, a polycrystalline silicon film is formed along an inner wall of a trench in which a capacitor is to be formed, and the polycrystalline silicon film and a lower electrode are contacted to each other on the entire inner wall of the trench. Oxygen permeated into the lower electrode during a thermal treatment of a tantalum oxide film is consumed at an interface between the polycrystalline silicon film and the lower electrode. Thus, oxygen does not reach the surface of a silicon plug below the lower electrode that would cause oxidation on the surface of the silicon plug and form a high-resistance oxide layer when a dielectric film formed on a lower electrode of a capacitor of a DRAM is subjected to a thermal treatment in an oxygen atmosphere.

Semiconductor integrated circuit device and method of manufacturing the same

The semiconductor device is formed according to the following steps. A TiN film 71 and a W film 72 are deposited on a silicon oxide film 64 including the inside of a via-hole 66 by the CVD method and thereafter, the W film 72 and TiN film 71 on the silicon oxide film 64 are etched back to leave only the inside of the via-hole 66 and form a plug 73. Then, a TiN film 74, Al-alloy film 75, and Ti film 76 are deposited on the silicon oxide film 64 including the surface of the plug 73 by the sputtering method and thereafter, the Ti film 76, Al-alloy film 75, and TiN film 74 are patterned to form second-layer wirings 77 and 78.

The semiconductor device is formed according to the following steps. A TiN film and a W film are deposited on a silicon oxide film including the inside of a via-hole by the CVD method and thereafter, the W film and TiN film on the silicon oxide film are etched back to leave only the inside of the via-hole and form a plug . Then, a TiN film , Al-alloy film , and Ti film are deposited on the silicon oxide film including the surface of the plug by the sputtering method and thereafter, the Ti film , Al-alloy film , and TiN film are patterned to form second-layer wirings and

A reflective liquid crystal display device comprises a transparent first substrate having formed thereon a transparent electrode, a first filter having a first color, and a second filte having a second color. A second substrate is disposed opposite and spaced-apart from the first substrate. A reflection layer is disposed on the second substrate. A polymer dispersed liquid crystal layer is disposed between the transparent electrode and the reflection layer and is formed by exposure to an ultraviolet ray in a preselected wavelength range. A ratio of a transmissivity of the first filter for the ultraviolet ray to a transmissivity of the second filter for the ultraviolet ray is 3.0 or less.

Reflective liquid crystal display device having light scattering liquid crystal display element, and method for manufacturing reflective liquid crystal display device

Semiconductor integrated circuit device in which a conductive film is

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Tokyo, Japan

Hiroshi Sakuma