Tokyo, Japan

Hiroki Shinkawata

This inventor holds 31 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Manufacturing. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Electronics Corporation, Renesas Technology Corp.. Active years: 1995-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hiroki Shinkawata. Retrieved from https://idiyas.com/inventor/hiroki-shinkawata

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31 

% Patents Active = 67.7

Average Co-Inventor Count = 1.2

ph-index = 8

Forward Citations = 232(Granted Patents)


Location History:

  • Hyogo, JP (1995 - 2003)
  • Kanagawa, JP (2013)
  • Tokyo, JP (2001 - 2023)

Company Filing History:


Years Active: 1995-2023

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Areas of Expertise:
Semiconductor Device
High Speed Memory
DRAM Structure
MIM Capacitor
CMP Dishing
Contact Hole
Stacked Capacitor
Memory Cell Layout
31 patents (USPTO):Explore Patents

Title: **Hiroki Shinkawata: Pioneering Innovator in Semiconductor Technology**

Introduction

Hiroki Shinkawata is a prominent inventor based in Tokyo, Japan, renowned for his contributions to the field of semiconductor technology. With a remarkable portfolio of 31 patents, he has significantly advanced innovations in semiconductor manufacturing processes, establishing himself as a key figure in this highly technical industry.

Latest Patents

Among Hiroki Shinkawata's latest patents are two noteworthy innovations. The first is the "Method of Manufacturing Semiconductor Device," where gate patterns are formed on a semiconductor layer, followed by the formation of a conductive film that covers these patterns. This process incorporates a polishing phase to create pad layers situated between gate patterns via sidewall spacers. His other patent, "Semiconductor Device and Manufacturing Method Thereof," outlines a method involving the formation of an element isolation region that penetrates both a semiconductor layer and an insulating layer. A gate electrode is established via a gate insulating film, with specific formations and adjustments made to enhance performance in semiconductor devices.

Career Highlights

Throughout his career, Hiroki Shinkawata has played significant roles in reputable companies, notably Mitsubishi Electric Corporation and Renesas Electronics Corporation. His work at these institutions has centered on advancing the capabilities and efficiencies of semiconductor technologies, making him a vital contributor to the field.

Collaborations

Hiroki has collaborated with esteemed colleagues like Yasushi Hashizume and Takashi Terauchi, sharing knowledge and insights that have led to successful advancements in their projects. These collaborations reflect his commitment to teamwork and innovation in technology development.

Conclusion

With an impressive array of patents and a deep-seated knowledge of semiconductor manufacturing, Hiroki Shinkawata exemplifies dedication to innovation in the tech industry. His work continues to influence the development of more efficient and advanced semiconductor devices, solidifying his reputation as a leading inventor in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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