The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Jul. 07, 2021
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Hitoshi Maeda, Tokyo, JP;

Tatsuyoshi Mihara, Tokyo, JP;

Hiroki Shinkawata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/304 (2006.01); H01L 27/12 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/304 (2013.01); H01L 21/7624 (2013.01); H01L 27/1203 (2013.01); H10B 10/12 (2023.02);
Abstract

Gate patterns are formed on a semiconductor layer and a conductive film is formed on the semiconductor layer so as to cover the gate patterns. By performing a polishing process to the conductive film and patterning the polished conductive film, pad layers are formed between the gate patterns via sidewall spacers.


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