The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Jun. 08, 2006
Hiroki Shinkawata, Tokyo, JP;
Hiroki Shinkawata, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor technique is provided which can achieve both of lowered resistance in a logic formation region and reduced leakage current of the capacitor of a memory device. Source/drain regions () are formed in the upper surface of a semiconductor substrate () in a memory formation region and cobalt silicide films () are formed in the upper surfaces of the source/drain regions (). Source/drain regions () are formed in the upper surface of the semiconductor substrate () in a logic formation region and cobalt silicide films () are formed in the upper surfaces of the source/drain regions (). The cobalt silicide films () in the logic formation region are thicker than the cobalt silicide films () in the memory formation region.