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For the Inventor, By the Inventor

Chongqing, China

Hequan Jiang

USPTO Granted Patents = 10 

Average Co-Inventor Count = 9.5

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal7 out of 33 
 
No. 24 Research Institute of China Electronics Technology Group Corporation
 patents
silverMedal3 out of 12 
 
Chongqing Gigachip Technology Co. Ltd.
 patents
bronzeMedal2 out of 20 
 
China Electronic Technology Corporation, 24th Research Institute
 patents
4. 1 out of 3 
 
China Electronics Technology Group Corporation No. 24 Research Institute
 patents
where one patent can have more than one assignee

Years Active: 2018-2025

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10 patents (USPTO):Explore Patents
1. 12457787 - Power semiconductor device and manufacturing method thereof (2025-10-28),
2. 12453157 - MOS device with resistive field plate for realizing conductance modulation field effect and preparation method thereof (2025-10-21),
3. 12237843 - Comparator and analog-to-digital converter (2025-02-25),
4. 12044583 - Digital temperature sensor circuit (2024-07-23),
5. 11848062 - Voltage control method and voltage control circuit for anti-fuse memory array (2023-12-19),
6. 11728820 - High-speed digital logic circuit for SAR_ADC and sampling adjustment method (2023-08-15),
7. 11558064 - SAR ADC and sampling method based on single-channel time-interleaved-sampling (2023-01-17),
8. 10778092 - Negative voltage generating circuit having automatic voltage adjustment function (2020-09-15),
9. 10735018 - Successive approximation algorithm-based ADC self-correcting circuit (2020-08-04),
10. 10003352 - High-precision analog-to-digital converter and DNL-based performance improvement method (2018-06-19),

Title: Hequan Jiang: Innovator in Power Semiconductor Technology

Introduction

Hequan Jiang is a prominent inventor based in Chongqing, China, known for his significant contributions to the field of power semiconductor devices. With a total of 10 patents to his name, Jiang has made remarkable advancements that enhance the performance and efficiency of semiconductor technologies.

Latest Patents

Among his latest patents, Jiang has developed a power semiconductor device and its manufacturing method. This invention features a plurality of second resistive field plate structures that optimize the electric field distribution around the cell region, thereby improving the overall voltage performance of the device. Another notable patent is the MOS device with a resistive field plate designed for conductance modulation. This device incorporates a semi-insulating resistive field plate that adjusts the doping concentration in the drift region, resulting in lower on-resistance and enhanced performance. The use of modern 2.5-dimensional processing technology further supports the miniaturization and high-density design of semiconductor structures.

Career Highlights

Hequan Jiang has worked with esteemed organizations such as the No. 24 Research Institute of China Electronics Technology Group Corporation and Chongqing Gigachip Technology Co. Ltd. His experience in these institutions has allowed him to refine his expertise in semiconductor technology and contribute to innovative solutions in the industry.

Collaborations

Throughout his career, Jiang has collaborated with notable colleagues, including Guangbing Chen and Dongbing Fu. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor research.

Conclusion

Hequan Jiang's work in power semiconductor technology exemplifies the innovative spirit of modern engineering. His patents reflect a commitment to enhancing device performance and efficiency, making significant contributions to the field.

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