The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2023
Filed:
Sep. 01, 2020
No.24 Research Institute of China Electronics Technology Group Corporation, Chongqing, CN;
Yan Wang, Chongqing, CN;
Peijian Zhang, Chongqing, CN;
Mingyuan Xu, Chongqing, CN;
Xian Chen, Chongqing, CN;
Feiyu Jiang, Chongqing, CN;
Xiyi Liao, Chongqing, CN;
Sheng Qiu, Chongqing, CN;
Zhengyuan Zhang, Chongqing, CN;
Ruzhang Li, Chongqing, CN;
Hequan Jiang, Chongqing, CN;
Yonghong Dai, Chongqing, CN;
Abstract
A voltage control method and a voltage control circuit for an anti-fuse memory array, including: obtaining a storage data address, dividing the storage data address into multiple subdata addresses, decoding each subdata address to obtain a corresponding group of decoder output signals, converting the corresponding group of decoder output signals into a group of control signals by a corresponding group of high voltage converters; connecting multiple groups of data selectors in series, outputting selection voltages input to each group of data selectors to an anti-fuse unit under the control of the corresponding group of control signals; programming or reading an anti-fuse unit; the selection voltages include one of a programming selection voltage, a reading selection voltage, and a non-designated selection voltage. The present disclosure reduces the number of transistors and saves layout areas when the programming or reading operation is performed.