This inventor holds 1 USPTO granted patent. Top assignee: No. 24 Research Institute of China Electronics Technology Group Corporation. Active years: 2023.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2023
Title: Feiyu Jiang: Innovator in Voltage Control Technology
Introduction
Feiyu Jiang is a notable inventor based in Chongqing, China. He has made significant contributions to the field of electronics, particularly in the area of voltage control methods for memory arrays. His innovative approach has the potential to enhance the efficiency of memory programming and reading operations.
Latest Patents
Feiyu Jiang holds a patent for a "Voltage control method and voltage control circuit for anti-fuse memory array." This invention involves obtaining a storage data address, dividing it into multiple subdata addresses, and decoding each subdata address to generate corresponding decoder output signals. These signals are then converted into control signals by high voltage converters. The design connects multiple groups of data selectors in series, allowing for the output of selection voltages to an anti-fuse unit. This method reduces the number of transistors required and saves layout areas during programming or reading operations.
Career Highlights
Feiyu Jiang is affiliated with the No. 24 Research Institute of China Electronics Technology Group Corporation. His work at this institute has allowed him to focus on advancing technologies that improve electronic memory systems. His dedication to innovation is evident in his patent and ongoing research efforts.
Collaborations
Feiyu Jiang has collaborated with notable colleagues such as Yan Wang and Peijian Zhang. Their combined expertise contributes to the advancement of technology in their field.
Conclusion
Feiyu Jiang's contributions to voltage control technology demonstrate his commitment to innovation in electronics. His patent reflects a significant advancement that could lead to more efficient memory systems in the future.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile