Chongqing, China

Sheng Qiu

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: No. 24 Research Institute of China Electronics Technology Group Corporation. Active years: 2023-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng Qiu. Retrieved from https://idiyas.com/inventor/sheng-qiu-bqgzoymf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 11.9

ph-index = 1


Company Filing History:


Years Active: 2023-2025

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2 patents (USPTO):Explore Patents

Title: Innovations of Sheng Qiu in Semiconductor Technology

Introduction

Sheng Qiu is a notable inventor based in Chongqing, China. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the performance and efficiency of electronic devices through innovative designs and methods.

Latest Patents

One of Sheng Qiu's latest patents is the "MOS device with resistive field plate for realizing conductance modulation field effect." This invention builds upon existing trench gate MOS devices by incorporating a semi-insulating resistive field plate. This plate is electrically connected to the trench gate structure and the drain structure in the drift region. The trench gate structure controls the on-off state of the MOS channel, while the resistive field plate adjusts the doping concentration of the drift region. This modulation leads to a lower on-resistance and improved performance in high-voltage applications. Additionally, the invention employs modern 2.5-dimensional processing technology based on deep trench etching, which supports miniaturization and high-density designs suitable for the evolving landscape of integrated semiconductor devices.

Another significant patent is the "Voltage control method and voltage control circuit for anti-fuse memory array." This invention outlines a method for managing storage data addresses by dividing them into multiple subdata addresses. Each subdata address is decoded to produce corresponding decoder output signals, which are then converted into control signals by high voltage converters. This innovative approach reduces the number of transistors required and saves layout area during programming or reading operations, enhancing the efficiency of anti-fuse memory arrays.

Career Highlights

Sheng Qiu is affiliated with the No. 24 Research Institute of China Electronics Technology Group Corporation. His work at this institute has allowed him to focus on cutting-edge research and development in semiconductor technologies. His contributions have been instrumental in advancing the capabilities of electronic devices.

Collaborations

Sheng Qiu has collaborated with notable colleagues such as Peijian Zhang and Hequan Jiang. Their combined expertise has fostered a productive research environment, leading to innovative solutions in the field of electronics.

Conclusion

Sheng Qiu's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a significant inventor in the industry. His innovative approaches continue to influence the development of modern electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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