No. 24 Research Institute of China Electronics Technology Group Corporation

Sheng Qiu

Hequan Jiang

Peijian Zhang

Ruzhang Li

Yan Wang

Mingyuan Xu

Yonghui Yang

Kaizhou Tan

Liang Chen

Tian Xiao

Jiahao Zhang

Ying Pei

Xiaoquan Li

Xian Chen

Guangbo Li

Pengfei Wang

Zhengyuan Zhang

Wei Cui

Yonghong Dai

Feiyu Jiang

Xiyi Liao

The MOS device with resistive field plate for realizing conductance modulation field effect in the present invention is based on the existing trench gate MOS device, and a semi-insulating resistive field plate electrically connected to the trench gate structure and the drain structure is added in the drift region, where the trench gate structure can control the on-off of the MOS channel, and the semi-insulating resistive field plate can adjust the doping concentration of the drift region to modulate the conductance of the on-state drift region and the distribution of off-state high-voltage blocking electric field, thus a lower on-resistance can be obtained. In addition, the modern 2.5-dimensional processing technology based on deep trench etching is adopted in the present invention, which is conducive to the miniaturization design and high density design of the structure and is more suitable for the More than Moore (beyond Moore) development of modern integrated semiconductor devices.

MOS device with resistive field plate for realizing conductance modulation field effect and preparation method thereof

A voltage control method and a voltage control circuit for an anti-fuse memory array, including: obtaining a storage data address, dividing the storage data address into multiple subdata addresses, decoding each subdata address to obtain a corresponding group of decoder output signals, converting the corresponding group of decoder output signals into a group of control signals by a corresponding group of high voltage converters; connecting multiple groups of data selectors in series, outputting selection voltages input to each group of data selectors to an anti-fuse unit under the control of the corresponding group of control signals; programming or reading an anti-fuse unit; the selection voltages include one of a programming selection voltage, a reading selection voltage, and a non-designated selection voltage. The present disclosure reduces the number of transistors and saves layout areas when the programming or reading operation is performed.

Voltage control method and voltage control circuit for anti-fuse memory array

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Chongqing, China

Sheng Qiu