No. 24 Research Institute of China Electronics Technology Group Corporation

Chongqing Gigachip Technology Co. Ltd.

China Electronic Technology Corporation, 24th Research Institute

China Electronics Technology Group Corporation No. 24 Research Institute

Hequan Jiang

Dongbing Fu

Guangbing Chen

Yuxin Wang

Jian'an Wang

Ruzhang Li

Gangyi Hu

Daiguo Xu

Zhengping Zhang

Rongbin Hu

Peijian Zhang

Yan Wang

Shiliu Xu

Yonglu Wang

Kaizhou Tan

Yonghui Yang

Tian Xiao

Jiahao Zhang

Sheng Qiu

Ting Li

Yong Zhang

Tao Liu

Liang Li

Jianan Wang

Zhengbo Huang

Mingyuan Xu

Zicheng Xu

Xueliang Xu

Liang Chen

Zhaohuan Tang

Yi Zhong

Yonghong Dai

Feiyu Jiang

Xiyi Liao

Xiaoquan Li

Ying Pei

Pengfei Wang

Guangbo Li

Wei Cui

Peng Wang

Xiaojun Fu

Xiaoquan Yu

Xian Chen

Zhengyuan Zhang

The disclosure provides a power semiconductor device and manufacturing method thereof. A plurality of second resistive field plate structures extending through an epitaxial layer in a first direction into a substrate are arranged in a termination region of the epitaxial layer and the plurality of second resistive field plate structures are arranged radially in a first plane. A plurality of tightly coupled second resistive field plates extending from a side close to a cell region to a side far away from the cell region form a more uniform three-dimensional electric field distribution diverging around the cell region, which optimizes a guiding and binding effect on a charge in a space depletion region of the cell region and improves a withstand voltage performance of the whole power semiconductor device.

Power semiconductor device and manufacturing method thereof

The MOS device with resistive field plate for realizing conductance modulation field effect in the present invention is based on the existing trench gate MOS device, and a semi-insulating resistive field plate electrically connected to the trench gate structure and the drain structure is added in the drift region, where the trench gate structure can control the on-off of the MOS channel, and the semi-insulating resistive field plate can adjust the doping concentration of the drift region to modulate the conductance of the on-state drift region and the distribution of off-state high-voltage blocking electric field, thus a lower on-resistance can be obtained. In addition, the modern 2.5-dimensional processing technology based on deep trench etching is adopted in the present invention, which is conducive to the miniaturization design and high density design of the structure and is more suitable for the More than Moore (beyond Moore) development of modern integrated semiconductor devices.

MOS device with resistive field plate for realizing conductance modulation field effect and preparation method thereof

The comparator includes an input unit, a load unit, a control switch, and an adjustment unit. The input ends of the input unit are connected to a first input signal and a second input signal. The load unit is connected to the input unit, and the gain of the comparator is adjusted by changing the gate voltages of the pair of gain adjustment transistors of the load unit. The adjustment unit is connected to the input unit, and the gate voltages of the pair of gain adjustment transistors are adjusted according to the enable state of the control switch. The present disclosure also provides an analog-to-digital converter.

Comparator and analog-to-digital converter

A digital temperature sensor circuit is disclosed. The digital temperature sensor circuit includes a proportional to the absolute temperature (PTAT) current source, generating a PTAT current proportional to absolute temperature; a sigma-delta modulation module, including an integrator, an analog-to-digital conversion unit, and a feedback digital-to-analog conversion unit; the integrator converts the PTAT current into temperature voltage; the analog-to-digital conversion unit compares the temperature voltage with a band gap reference voltage to generate a digital modulation signal with a duty ratio proportional to the temperature; the feedback digital-to-analog conversion unit adjusts the voltage input by the analog-to-digital conversion unit and controls the charging and discharging speed of the integrator; a digital filter, quantizing the digital modulation signal into a digital signal, and outputting the digital signal.

Digital temperature sensor circuit

A voltage control method and a voltage control circuit for an anti-fuse memory array, including: obtaining a storage data address, dividing the storage data address into multiple subdata addresses, decoding each subdata address to obtain a corresponding group of decoder output signals, converting the corresponding group of decoder output signals into a group of control signals by a corresponding group of high voltage converters; connecting multiple groups of data selectors in series, outputting selection voltages input to each group of data selectors to an anti-fuse unit under the control of the corresponding group of control signals; programming or reading an anti-fuse unit; the selection voltages include one of a programming selection voltage, a reading selection voltage, and a non-designated selection voltage. The present disclosure reduces the number of transistors and saves layout areas when the programming or reading operation is performed.

Voltage control method and voltage control circuit for anti-fuse memory array

The present disclosure belongs to the technical field of analog or digital-analog hybrid integrated circuits, and relates to a high-speed SAR_ADC digital logic circuit, in particular to a high-speed digital logic circuit for SAR_ADC and a sampling adjustment method. The digital logic circuit includes a comparator, a logic control unit parallel to the comparator, and a capacitor array DAC. The comparator and the logic control unit are simultaneously triggered by a clock signal. The comparator outputs a valid comparison result Dp/Dn, the logic control unit outputs a corresponding rising edge signal, the rising edge signal is slightly later than Dp/Dn output by the comparator through setting a delay match, Dp/Dn is captured by the corresponding rising edge signal, thereby settling a capacitor array. The present disclosure eliminates the disadvantage of the improper settling of the capacitor array of the traditional parallel digital logic.

High-speed digital logic circuit for SAR_ADC and sampling adjustment method

SAR ADC and sampling method based on single-channel TIS. The SAR ADC comprises: a capacitor array comprising a weight capacitor and a compensation capacitor, a first switch array, a second switch array, a channel switch group and a sampling switch; when in a sampling state: a lower plate of the weight capacitor is connected to an input voltage by means of the first switch array, and an upper plate of the capacitor array is connected to a common mode voltage by the sampling switch and the channel switch group; when in a successive approximation state: the lower plate of the weight capacitor is connected to a reference voltage by the second switch array. Input signals are sampled by using a unified to sampling switch, which solves the problem in the traditional technology that sampling moments are mismatched due to different sampling signals in each time-interleaved channel.

SAR ADC and sampling method based on single-channel time-interleaved-sampling

The present disclosure provides a negative voltage generating circuit having an automatic voltage adjustment function, including a negative voltage generating circuit and a feedback control module. The negative voltage generated by the negative voltage generating circuit is adjusted by the feedback control module. The negative voltage generating circuit having the automatic voltage adjustment function of the present disclosure can automatically adjust the charge current of the charge pump according to the load current, thereby realizing the stability of the output voltage, such that the traditional analog circuit structure can work normally under the extremely low power supply voltage, and is particularly suitable for the deep submicron process. The present disclosure also realizes the digital adjustment of the output voltage, the negative voltage output is no longer single, and can be adjusted according to actual needs.

Negative voltage generating circuit having automatic voltage adjustment function

Disclosed is a successive approximation algorithm-based ADC self-correcting circuit, comprising: a coding circuit, a voltage dividing resistor string, a comparator array, a multi-path selection switch, a first digital-to-analog converter, a reference circuit, a control register, and a data register; an input end of the coding circuit is connected to an output end of the comparator array; a positive-phase input end of each comparator in the comparator array is connected to a mobile end of the multi-path selection switch; a negative-phase input end of each comparator in the comparator array is correspondingly connected between each two neighboring resistors in the voltage dividing resistor string; an enabling end of the comparator array is connected to the control register; a first immobile end of the multi-path selection switch is used for receiving an analog signal, a second immobile send is connected to an output end of the first digital-to-analog converter, and a control end is connected to the control register; the reference circuit is connected to the voltage dividing resistor string and the comparator array for use to correct an intermediate level and voltage range of the voltage dividing resistor string to be consistent with that of the output of the first digital-to-analog converter.

Successive approximation algorithm-based ADC self-correcting circuit

The present invention provides a high-precision analog-to-digital converter, includes a redundant weight capacitor array, a comparator, a code reestablishment circuit, a weight storage circuit and a control logic circuit. The redundant weight capacitor array collects input voltages and generates output voltages in a sampling stage. The comparator compares the output voltages of the redundant weight capacitor array. The code reestablishment circuit calculates an output code of the successive approximation type analog-to-digital converter according to the comparator output result and a capacitor weight in the weight storage circuit. The weight storage circuit stores the capacitor weight. The control logic circuit controls the sampling and conversion stages of the redundant weight capacitor array. The present invention also provides a DNL-based performance improvement method adapted to the analog-to-digital converter.

High-precision analog-to-digital converter and DNL-based performance improvement method

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Chongqing, China

Hequan Jiang