Zhuhai, China

Hang Liao

This inventor holds 10 USPTO granted patents. Top assignee: Innoscience (Zhuhai) Technology Co., Ltd.. Active years: 2022-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hang Liao. Retrieved from https://idiyas.com/inventor/hang-liao-ndgilw9r

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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10 patents (USPTO):Explore Patents

Title: Innovations of Hang Liao in Semiconductor Technology

Introduction

Hang Liao is a prominent inventor based in Zhuhai, China, known for his significant contributions to semiconductor technology. He holds a total of 10 patents, showcasing his expertise and innovative spirit in this critical field. His work focuses on developing advanced semiconductor device structures and manufacturing methods that enhance electronic performance.

Latest Patents

One of Hang Liao's latest patents is titled "Semiconductor device structures and methods of manufacturing the same." This patent describes a semiconductor device structure that includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first electrode, a second electrode, a gate structure, and a temperature-sensitive component. The first nitride semiconductor layer is positioned on the substrate, while the second nitride semiconductor layer, which has a greater bandgap than the first, is placed on top. The first and second electrodes are also situated on the second nitride semiconductor layer, with the gate structure located between them. Additionally, the temperature-sensitive component is strategically placed outside the region between the gate structure and the first electrode.

Another notable patent is for an "Electronic device," which features a semiconductor structure comprising a first nitride semiconductor layer, a second nitride semiconductor layer, and a first conductive structure. The second nitride semiconductor layer is positioned on the first, and the first conductive structure is placed on the second layer. This structure serves dual functions, acting as either a drain or source of a transistor and as an anode or cathode of a diode.

Career Highlights

Hang Liao is currently employed at Innoscience Technology Co., Ltd., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the capabilities of electronic devices, making them more efficient and reliable.

Collaborations

Hang Liao collaborates with talented individuals in his field, including Chunhua Zhou and King Yuen Wong. Their combined expertise fosters a creative environment that drives innovation and enhances the development of new technologies.

Conclusion

Hang Liao's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work not only advances the field but also sets the stage for future innovations in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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