The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Apr. 16, 2020
Applicant:

Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;

Inventors:

Hang Liao, Zhuhai, CN;

Lijie Zhang, Zhuhai, CN;

King Yuen Wong, Zhuhai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/285 (2006.01); H01L 21/3213 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42316 (2013.01); H01L 21/28581 (2013.01); H01L 21/28587 (2013.01); H01L 21/32136 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract

The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-V material layer and a gate structure. The gate structure includes a first portion and a second portion on the first portion. The first portion is on the III-V material layer. The first portion has a first surface and a second surface opposite to the first surface and adjacent to the III-V material layer. A length of the second surface of the first portion of the gate structure is less than a length of the first surface of the first portion of the gate structure. A length of the second portion of the gate structure is less than the length of the first portion of the gate structure.


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