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Innoscience (Zhuhai) Technology Co., Ltd.

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USPTO Granted Patents = 64

EPO Patents = 1

Trademarks = 2

Forward Citations = 16

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42 inventors (with patents filed for the assignee):

King Yuen Wong (23 out of 51 patents)

Anbang Zhang (12 out of 14 patents)

Hang Liao (10 out of 10 patents)

4. Qiyue Zhao (9 out of 28 patents)

5. Ronghui Hao (9 out of 26 patents)

6. Chunhua Zhou (9 out of 25 patents)

7. Hao Li (8 out of 9 patents)

8. Haoning Zheng (8 out of 8 patents)

9. Han-Chin Chiu (7 out of 7 patents)

10. Jian Wang (7 out of 7 patents)

11. Jianjian Sheng (6 out of 14 patents)

12. Yaobin Guan (5 out of 6 patents)

13. Chuan He (5 out of 5 patents)

14. Jinhan Zhang (5 out of 15 patents)

15. Chao Wang (4 out of 15 patents)

Core Competencies:

Semiconductor Device

Nitride-Based Device

High Electron Mobility Transistor

Fabrication Method

Electronic Device

Clamping Circuit

Gate Leakage Current

Multichannel Heterostructure

Doped Semiconductor Materials

Dynamic On-Resistance

Electrostatic Protection

3D Stacking

64 patents: Sort by Forward Citations

1. 12484279 - Semiconductor device (2025-11-25),

2. 12317569 - Semiconductor device with multichannel heterostructure and manufacturing method thereof (2025-05-27),

3. 12316092 - Circuit system and manufacturing and operating method therefor (2025-05-27),

4. 12295165 - Semiconductor device structure (2025-05-06),

5. 12289915 - Semiconductor structure (2025-04-29),

6. 12211912 - Semiconductor device and fabrication method thereof (2025-01-28),

7. 12199000 - Semiconductor device structures and methods of manufacturing the same (2025-01-14),

8. 12174229 - Apparatus for measuring dynamic on-resistance of nitride-based semiconductor device (2024-12-24),

9. 12159908 - Semiconductor device and fabrication method thereof (2024-12-03),

10. 12125845 - Electronic device (2024-10-22),

11. 12094714 - Semiconductor devices with doped semiconductor materials (2024-09-17),

12. 12094713 - Nitride-based semiconductor device and manufacturing method thereof (2024-09-17),

13. 12074199 - Semiconductor device with a field plate extending from drain (2024-08-27),

14. 12068373 - Semiconductor device and fabrication method thereof (2024-08-20),

15. 12051739 - Package structure having a first connection circuit and manufacturing method thereof (2024-07-30),

Company Overview

Innoscience (Zhuhai) Technology Co., Ltd. specializes in the development and manufacturing of advanced semiconductor devices, with a focus on nitride-based technologies. The company is recognized for its innovations in high electron mobility transistors and related fabrication methods, which are essential for enhancing the performance of electronic devices. Located in Zhuhai, China, Innoscience is committed to advancing semiconductor technology, addressing challenges such as gate leakage current and improving multichannel heterostructures.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

64 Patents

#4 in Zhuhai

#508 in China

#11,489 in the World

Innoscience (Zhuhai) Technology Co., Ltd.

Forward Citations = 16

42 inventors:

King Yuen Wong (23 out of 51 patents)

Anbang Zhang (12 out of 14 patents)

Hang Liao (10 out of 10 patents)

4. Qiyue Zhao (9 out of 28 patents)

5. Ronghui Hao (9 out of 26 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Innoscience (Zhuhai) Technology Co., Ltd.. Retrieved from https://idiyas.com/company/innoscience-zhuhai-technology-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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