The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2024
Filed:
Jul. 07, 2020
Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;
Chao Wang, Zhuhai, CN;
Ming-Hong Chang, Zhuhai, CN;
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai, CN;
Abstract
A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure, and a field plate. The second nitride semiconductor layer is formed on a first surface of the first nitride semiconductor layer. The gate structure is disposed on the second nitride semiconductor layer. The field plate includes a first portion and a second portion connected to the first portion. The first portion has a first surface substantially in parallel to the first surface of the first nitride semiconductor layer, and a second surface adjacent to the first surface of the first portion. The first surface of the first portion of the field plate and the second surface of the first portion of the field plate define a first angle of about 90°.