The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Jun. 30, 2020
Applicant:
Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;
Inventors:
Assignee:
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42316 (2013.01); H01L 29/2003 (2013.01); H01L 29/401 (2013.01); H01L 29/402 (2013.01); H01L 29/41758 (2013.01); H01L 29/41775 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a III-nitride layer, a gate, a connection structure, and a gate bus. The gate is disposed over the III-nitride layer. The connection structure is disposed over the gate. The gate bus extends substantially in parallel to the gate and disposed over the connection structure from a top view perspective. The gate bus is electrically connected to the gate through the connection structure.