The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

May. 14, 2024
Applicant:

Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;

Inventors:

Ronghui Hao, Zhuhai, CN;

King Yuen Wong, Zhuhai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2024.12); H10D 62/824 (2024.12); H10D 62/85 (2024.12); H10D 64/01 (2024.12); H10D 64/62 (2024.12);
U.S. Cl.
CPC ...
H10D 64/256 (2024.12); H10D 62/824 (2024.12); H10D 62/85 (2024.12); H10D 62/8503 (2024.12); H10D 64/01 (2024.12); H10D 64/62 (2024.12);
Abstract

A semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a bandgap greater than that of the first nitride semiconductor layer, the second nitride semiconductor layer forming a first recess and a second recess; and an electrode disposed on the second nitride semiconductor layer and comprising an element; wherein the electrode is disposed in the first recess and the second recess.


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