The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2024
Filed:
Oct. 07, 2020
Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;
Hang Liao, Zhuhai, CN;
Qiyue Zhao, Zhuhai, CN;
Chang An Li, Zhuhai, CN;
Chao Wang, Zhuhai, CN;
Chunhua Zhou, Zhuhai, CN;
King Yuen Wong, Zhuhai, CN;
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai, CN;
Abstract
The present invention relates to a semiconductor device having an improved gate leakage current. The semiconductor device includes: a substrate; a first nitride semiconductor layer, positioned above the substrate; a second nitride semiconductor layer, positioned above the first nitride semiconductor layer and having an energy band gap greater than that of the first nitride semiconductor layer; a source contact and a drain contact, positioned above the second nitride semiconductor layer; a doped third nitride semiconductor layer, positioned above the second nitride semiconductor layer and between the drain contact and the source contact; and a gate electrode, positioned above the doped third nitride semiconductor layer, where the doped third nitride semiconductor layer has at least one protrusion extending along a direction substantially parallel to an interface between the first nitride semiconductor layer and the second nitride semiconductor layer, thereby improving the gate leakage current phenomenon.