Wuhan, China

Haibo Li

This inventor holds 32 USPTO granted patents and 7 published patent applications and 6 EPO patents, primarily in NAND Memory Technology. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haibo Li. Retrieved from https://idiyas.com/inventor/haibo-li-kv5rpr88

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.8

ph-index = 2

Forward Citations = 21(Granted Patents)


Location History:

  • Wuhan, CN (2020 - 2024)
  • Hubei, CN (2022 - 2024)

Company Filing History:


Years Active: 2020-2026

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Areas of Expertise:
NAND Memory
Memory Device
Programming Method
Retention Error
3D NAND
Multi-Pass Programming
Non-Volatile Memory
Erasing Method
Bitline Bias Voltages
Control Method
Gray Codes
Program Operations
32 patents (USPTO):Explore Patents

Title: Haibo Li: Innovator in Memory Device Technology

Introduction

Haibo Li, located in Wuhan, China, is a prolific inventor with an impressive portfolio of 28 patents. His innovations primarily focus on advancements in memory device technology, showcasing his expertise in this cutting-edge field.

Latest Patents

Among his latest inventions is a patent for a method for reading memory devices. This method involves the utilization of multiple word lines and multi-bit memory cells, allowing the stored values of these cells to be read through multi-level preset read voltages. It incorporates defining read offsets, selecting sampling voltages, and setting offset flags based on sampling reading values.

Another significant patent from Haibo Li is for a memory device that includes dual planes. This device features a control circuit that can simultaneously program both planes, ensuring efficiency in the programming process. It is designed to keep programming the second plane even if the first is successfully programmed while addressing instances of unsuccessful programming attempts.

Career Highlights

Haibo Li currently works at Yangtze Memory Technologies Co., Ltd., a leading company in the memory technology sector. His contributions have not only enhanced the company's technological capabilities but have also added significant value to the field of memory devices as a whole.

Collaborations

Throughout his career, Haibo Li has collaborated with esteemed colleagues such as Chao Zhang and Zhipeng Dong. Together, they drive innovation and contribute to advancements that benefit the larger tech community.

Conclusion

Haibo Li's commitment to innovation in memory device technology highlights the importance of ongoing research and development in the tech industry. With a growing patent portfolio, he continues to influence the field, making significant strides that shape the future of memory technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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