Wuhan, China

Haibo Li

USPTO Granted Patents = 31 

 

Average Co-Inventor Count = 2.8

ph-index = 2

Forward Citations = 21(Granted Patents)


Location History:

  • Wuhan, CN (2020 - 2024)
  • Hubei, CN (2022 - 2024)

Company Filing History:


Years Active: 2020-2025

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31 patents (USPTO):Explore Patents

Title: Haibo Li: Innovator in Memory Device Technology

Introduction

Haibo Li, located in Wuhan, China, is a prolific inventor with an impressive portfolio of 28 patents. His innovations primarily focus on advancements in memory device technology, showcasing his expertise in this cutting-edge field.

Latest Patents

Among his latest inventions is a patent for a method for reading memory devices. This method involves the utilization of multiple word lines and multi-bit memory cells, allowing the stored values of these cells to be read through multi-level preset read voltages. It incorporates defining read offsets, selecting sampling voltages, and setting offset flags based on sampling reading values.

Another significant patent from Haibo Li is for a memory device that includes dual planes. This device features a control circuit that can simultaneously program both planes, ensuring efficiency in the programming process. It is designed to keep programming the second plane even if the first is successfully programmed while addressing instances of unsuccessful programming attempts.

Career Highlights

Haibo Li currently works at Yangtze Memory Technologies Co., Ltd., a leading company in the memory technology sector. His contributions have not only enhanced the company's technological capabilities but have also added significant value to the field of memory devices as a whole.

Collaborations

Throughout his career, Haibo Li has collaborated with esteemed colleagues such as Chao Zhang and Zhipeng Dong. Together, they drive innovation and contribute to advancements that benefit the larger tech community.

Conclusion

Haibo Li's commitment to innovation in memory device technology highlights the importance of ongoing research and development in the tech industry. With a growing patent portfolio, he continues to influence the field, making significant strides that shape the future of memory technologies.

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