The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2024
Filed:
Sep. 15, 2022
Yangtze Memory Technologies Co., Ltd., Hubei, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
In a method for reading a memory device including a first memory cell string, in a pre-verify stage, a first verify voltage is applied on a gate terminal of a selected memory cell of the first memory cell string, where the selected memory cell is programmed and arranged between a first adjacent memory cell and a second adjacent memory cell. A first bias voltage is applied on a gate terminal of at least one memory cell of the first memory cell string that is not programmed. In a verify stage, a second verify voltage is applied on the gate terminal of the selected memory cell of the first memory cell string. A second bias voltage is applied on the gate terminal of the at least one memory cell of the first memory cell string that is not programmed, where the second bias voltage is smaller than the first bias voltage.