The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Jan. 11, 2022
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Zhi Chao Du, Wuhan, CN;
Yu Wang, Wuhan, CN;
Haibo Li, Wuhan, CN;
Ke Jiang, Wuhan, CN;
Ye Tian, Wuhan, CN;
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G11C 7/12 (2006.01); G11C 7/22 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 7/12 (2013.01); G11C 7/227 (2013.01); G11C 16/3459 (2013.01); G11C 2207/002 (2013.01); G11C 2216/20 (2013.01);
Abstract
A memory system includes a memory cell array and a controller coupled to the memory cell array. The controller is configured to control applying a first program voltage to a word line to program memory cells in the memory cell array, the memory cells being coupled to the word line, and in response to receiving a suspend command, control applying a positive bias discharge voltage to the word line when the first program voltage ramps down.