The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2025
Filed:
Dec. 28, 2022
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Abstract
A method for reading a memory device is provided. The memory device includes a plurality of word lines and a plurality of multi-bit memory cells connected to the plurality of word lines, and each of the multi-bit memory cells is configured such that a stored value of the multi-bit memory cell is read through multi-level preset read voltages. The method includes: defining at least one read offset for each of the multi-level preset read voltages respectively, selecting at least one of the multi-level preset read voltages as at least one sampling voltage, reading a multi-bit memory cell on an adjacent word line of a to-be-read multi-bit memory cell, and setting at least one offset flag, each representing a size of a respective one of at least one read offset, according to a sampling reading value of each of the at least one sampling voltage.