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For the Inventor, By the Inventor

Wuhan, China

Chao Zhang

This inventor holds 16 USPTO granted patents and 2 published patent applications and 2 EPO patents. Top assignees: Yangtze Memory Technologies Co., Ltd., Hubei Hope Pharmaceutical Co., Ltd., Wuhan Iron and Steel (Group) Corp. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chao Zhang. Retrieved from https://idiyas.com/inventor/chao-zhang-4fyoa258

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 

% Patents Active = 93.8

 

Average Co-Inventor Count = 2.9

ph-index = 2

Forward Citations = 25(Granted Patents)


Location History:

  • Wuhan, CN (2011 - 2023)
  • Hubei, CN (2019 - 2024)

Company Filing History:

goldMedal13 out of 1,190 
 
Yangtze Memory Technologies Co., Ltd.
 patents
silverMedal1 out of 1 
 
Hubei Hope Pharmaceutical Co., Ltd.
 patent
bronzeMedal1 out of 1 
 
Wuhan Iron and Steel (Group) Corp
 patent
4. 1 out of 172 
 
Wuhan University
 patents

Years Active: 2011-2025

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16 patents (USPTO):Explore Patents
1. 12272404 - Programming for three-dimensional NAND memory (2025-04-08),
2. 12205652 - Method for reading memory device and memory device (2025-01-21),
3. 12154626 - Memory device and programming method thereof (2024-11-26),
4. 12100462 - Memory device and multi-pass program operation thereof (2024-09-24),
5. 11887671 - Programming for three-dimensional NAND memory (2024-01-30),
6. 11854613 - Program and read operations using different gray codes and memory device for performing the same (2023-12-26),
7. 11837007 - Pedestrian re-identification method based on virtual samples (2023-12-05),
8. 11742037 - Memory device and multi-pass program operation thereof (2023-08-29),
9. 11615849 - Memory device and programming method thereof (2023-03-28),
10. 11581044 - Erasing method for 3D NAND flash memory (2023-02-14),
11. 11232839 - Erasing method for 3D NAND flash memory (2022-01-25),
12. 11139029 - Memory device and programming method thereof (2021-10-05),
13. 10811111 - Non-volatile memory device and method for programming in non-volatile memory device by applying multiple bitline bias voltages (2020-10-20),
14. 10796777 - Method for programming in non-volatile memory device by applying multiple bitline bias voltages (2020-10-06),
15. 10188765 - Super dry fog generator (2019-01-29),

Title: Chao Zhang: Innovator in Memory Technology

Introduction

Chao Zhang is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, holding a total of 16 patents. His work focuses on advancements in three-dimensional NAND memory devices, which are crucial for modern data storage solutions.

Latest Patents

Zhang's latest patents include innovative methods for programming and reading memory devices. One notable patent describes a memory device that incorporates selected word lines connected to first memory cells, along with multiple groups of unselected word lines linked to additional memory cells. This design allows for the application of different program voltages and pass voltages, enhancing the efficiency of memory operations. Another patent outlines a method for reading multi-bit memory cells using preset read voltages, which improves the accuracy and speed of data retrieval.

Career Highlights

Throughout his career, Chao Zhang has worked with leading companies in the technology sector. He has been associated with Yangtze Memory Technologies Co., Ltd. and Wuhan Iron and Steel (Group) Corporation. His experience in these organizations has allowed him to develop and refine his expertise in memory technology.

Collaborations

Zhang has collaborated with notable professionals in his field, including Haibo Li and Changhyun Lee. These partnerships have contributed to his innovative work and the successful development of his patents.

Conclusion

Chao Zhang is a key figure in the advancement of memory technology, with a strong portfolio of patents that reflect his innovative spirit. His contributions continue to shape the future of data storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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