The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 04, 2025

Filed:

Jul. 24, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Haibo Li, Wuhan, CN;

Man Lung Mui, Wuhan, CN;

Yu Wang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3486 (2013.01); G11C 16/08 (2013.01); G11C 16/3459 (2013.01);
Abstract

In certain aspects, a memory device includes a plurality of memory cells and a control circuit coupled to the plurality of memory cells. The plurality of memory cells includes a first set of memory cells configured to be programmed into a first set of programming states each of which is not lower than a first predetermined programming state. The control circuit is configured to perform a first program pass on the first set of memory cells. The control circuit is configured to continue to program at least a first memory cell from the first set of memory cells with one or more first programming voltages. A threshold voltage of the first memory cell is greater than a first verification voltage that corresponds to a first programming state of the first memory cell. The control circuit is configured to perform a second program pass on the first set of memory cells.


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