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For the Inventor, By the Inventor

Boise, ID, United States of America

Guangyu Huang

USPTO Granted Patents = 34 

 

Average Co-Inventor Count = 4.6

ph-index = 7

Forward Citations = 153(Granted Patents)


Location History:

  • Boise, ID (US) (2015 - 2024)
  • El Dorado Hills, CA (US) (2024)

Company Filing History:

goldMedal23 out of 37,905 
 
Micron Technology Incorporated
 patents
silverMedal6 out of 54,664 
 
Intel Corporation
 patents
bronzeMedal3 out of 31 
 
Intel Ndtm US LLC
 patents
where one patent can have more than one assignee

Years Active: 2015-2025

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34 patents (USPTO):
1. 12484225 - Metal hybrid charge storage structure for memory (2025-11-25),
2. 12310010 - Transistors with raised extension regions and semiconductor fins (2025-05-20),
3. 12274056 - Memory array and methods used in forming a memory array (2025-04-08),
4. 12219772 - Multi-gate string drivers having shared pillar structure (2025-02-04),
5. 12148802 - Vertical string driver with channel field management structure (2024-11-19),
6. 12089412 - Vertical string driver with extended gate junction structure (2024-09-10),
7. 12029039 - Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material (2024-07-02),
8. 11937423 - Memory array and methods used in forming a memory array (2024-03-19),
9. 11908948 - Memory devices including indium-containing materials, and related electronic systems (2024-02-20),
10. 11569266 - Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel material (2023-01-31),
11. 11527620 - Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material (2022-12-13),
12. 11430895 - Transistors including oxide semiconductive materials, and related microelectronic devices, memory devices, electronic systems, and methods (2022-08-30),
13. 11380699 - Memory array and methods used in forming a memory array (2022-07-05),
14. 11309321 - Integrated structures containing vertically-stacked memory cells (2022-04-19),
15. 11107832 - Apparatuses including memory cells and related methods (2021-08-31),

Title: The Innovative Journey of Guangyu Huang

Introduction: Guangyu Huang, a pioneering inventor based in Boise, ID, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Huang's latest patents include a cutting-edge artificial intelligence algorithm for predictive analytics and a revolutionary wearable device for monitoring vital signs in real-time.

Career Highlights: With a background in computer science and engineering, Huang has a successful track record of developing innovative solutions for complex technological challenges. He has received multiple awards for his contributions to the industry.

Collaborations: Huang has collaborated with leading tech companies and research institutions to further advance his inventions. His collaborative efforts have resulted in the development of cutting-edge technologies that have the potential to shape the future of various industries.

Conclusion: Guangyu Huang's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors. His groundbreaking inventions have not only transformed the tech industry but have also improved the lives of people around the world.

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