The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2024
Filed:
Aug. 22, 2022
Micron Technology, Inc., Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Guangyu Huang, El Dorado Hills, CA (US);
Haitao Liu, Boise, ID (US);
Akira Goda, Tokyo, JP;
Micron Technology, Inc., Boise, ID (US);
Abstract
A transistor comprises a lower contact structure, a channel structure, a dielectric fill structure, and an upper contact structure. The lower contact structure comprises a first oxide semiconductive material. The channel structure contacts the lower contact structure and comprises a second oxide semiconductive material having a smaller atomic concentration of one or more metals than the first oxide semiconductive material. The dielectric fill structure contacts an inner side surface of the channel structure and has a recessed upper surface relative to the channel structure. The upper contact structure comprises a third oxide semiconductive material having a greater atomic concentration of the one or more metals than the channel structure. The upper contact structure comprises a first portion contacting the upper surface of the dielectric fill structure and the inner side surface of the channel structure, and a second portion contacting the upper surface of the channel structure.