The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jul. 14, 2021
Intel Ndtm Us Llc, Santa Clara, CA (US);
Guangyu Huang, El Dorado, CA (US);
Dipanjan Basu, Portland, OR (US);
Meng-Wei Kuo, Boise, ID (US);
Randy Koval, Albuquerque, NM (US);
Henok Mebrahtu, Shanghai, CN;
Minsheng Wang, Shanghai, CN;
Jie Li, Shanghai, CN;
Fei Wang, Shanghai, CN;
Qun Gao, Shanghai, CN;
Xingui Zhang, Shanghai, CN;
Guanjie Li, Shanghai, CN;
Intel NDTM US LLC, Santa Clara, CA (US);
Abstract
Systems, apparatuses and methods may provide for memory cell technology comprising a control gate, a conductive channel, and a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure includes a polysilicon layer and a metal layer. In one example, the metal layer includes titanium nitride or other high effective work function metal.