This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Ndtm US LLC. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Qun Gao - Innovator in Memory Cell Technology
Introduction
Qun Gao is a prominent inventor based in Shanghai, China. She has made significant contributions to the field of memory cell technology, showcasing her innovative spirit and technical expertise.
Latest Patents
Qun Gao holds a patent for a "Metal hybrid charge storage structure for memory." This invention includes systems, apparatuses, and methods that provide memory cell technology comprising a control gate, a conductive channel, and a charge storage structure. The charge storage structure features a polysilicon layer and a metal layer, with the metal layer potentially including titanium nitride or other high effective work function metals. This advancement is crucial for enhancing memory cell performance.
Career Highlights
Qun Gao is currently employed at Intel NDTM US LLC, where she continues to push the boundaries of technology. Her work focuses on developing innovative solutions that improve memory storage capabilities.
Collaborations
Qun Gao collaborates with Dipanjan Basu, who is also a talented professional in the field. Their partnership exemplifies the importance of teamwork in driving technological advancements.
Conclusion
Qun Gao's contributions to memory cell technology and her innovative patent highlight her role as a leading inventor in the industry. Her work at Intel NDTM US LLC continues to influence the future of memory technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile