This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Ndtm US LLC. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Guanjie Li: Innovator in Memory Cell Technology
Introduction
Guanjie Li is a notable inventor based in Shanghai, China. He has made significant contributions to the field of memory cell technology. His innovative work has led to the development of a unique patent that enhances the efficiency and effectiveness of memory storage systems.
Latest Patents
Guanjie Li holds a patent for a "Metal hybrid charge storage structure for memory." This invention includes systems, apparatuses, and methods that provide memory cell technology comprising a control gate, a conductive channel, and a charge storage structure. The charge storage structure is coupled to both the control gate and the conductive channel, featuring a polysilicon layer and a metal layer. Notably, the metal layer may include titanium nitride or other high effective work function metals, showcasing the advanced materials used in his design.
Career Highlights
Guanjie Li is currently employed at Intel NDTM US LLC, where he continues to push the boundaries of technology. His work at Intel has allowed him to collaborate with other talented professionals in the field, further enhancing his contributions to memory technology.
Collaborations
One of his notable coworkers is Dipanjan Basu. Together, they work on innovative projects that aim to advance memory cell technology and improve overall performance in electronic devices.
Conclusion
Guanjie Li's contributions to memory cell technology through his patent and work at Intel NDTM US LLC highlight his role as a key innovator in the field. His advancements in charge storage structures are paving the way for future developments in memory technology.