The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Mar. 18, 2020
Micron Technology, Inc., Boise, ID (US);
Guangyu Huang, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Chandra V. Mouli, Boise, ID (US);
Srinivas Pulugurtha, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Memory devices and electronic systems include an array of vertical memory cells positioned along respective vertical channels to define vertical memory strings. Each of the vertical channels includes a channel material exhibiting an electron mobility of at least about 30 cm/(V·s) and a room temperature band gap of at least about 1.40 eV (e.g., zinc oxide, silicon carbide, indium phosphide, indium gallium zinc oxide, gallium arsenide, or molybdenum disulfide) and a bottom plug material exhibiting a room temperature band gap of less than about 1.10 eV (e.g., silicon germanium, germanium, or indium gallium arsenide). Methods of fabricating a memory device include forming such a bottom plug material within vertical channels and forming such a channel material electrically coupled to the bottom plug material.