Gu-Huan Li

Title: Gu-Huan Li: Innovator in Memory Circuit Technology

Introduction

Gu-Huan Li, an accomplished inventor based in Zhubei, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 34 patents, his work primarily focuses on memory circuits and their operational methodologies.

Latest Patents

Among his latest inventions, Gu-Huan Li has developed a "Memory circuit and method of operating same," which includes non-volatile memory cells, comparators, and detection circuits. This innovative design incorporates a comparator that generates an output signal while maintaining a proper operational structure between the memory cell and comparator. Another notable patent is titled "Semiconductor memory devices with diode-connected MOS," featuring a sophisticated memory device comprising multiple non-volatile memory cells linked to control lines and bit lines. This invention employs a series of transistors and capacitors, showcasing Li's profound understanding of memory architecture.

Career Highlights

Gu-Huan Li has spent a significant portion of his career at Taiwan Semiconductor Manufacturing Company Limited, a leading entity in the semiconductor manufacturing industry. Throughout his tenure, he has consistently focused on pioneering advancements in memory technologies, solidifying his reputation as a leading inventor in this field.

Collaborations

Li's work has often been enhanced through collaborative efforts with notable colleagues, including Cheng-Hsiung Kuo and Yue-Der Chih. These collaborations have resulted in innovative breakthroughs and have contributed to the company's advancements in semiconductor technology.

Conclusion

With a robust patent portfolio and impactful collaborations, Gu-Huan Li continues to shape the landscape of memory circuit technology. His inventions not only reflect his technical prowess but also position him as a key player in the future of semiconductor innovations.