The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2025

Filed:

Nov. 29, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chun-Hao Chang, Hsinchu, TW;

Gu-Huan Li, Hsinchu, TW;

Shao-Yu Chou, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
G11C 17/18 (2013.01); G11C 17/16 (2013.01);
Abstract

A memory circuit includes a non-volatile memory cell, a comparator and a detection circuit. The comparator is coupled to the non-volatile memory cell, and configured to generate a first output signal. The comparator including a first input terminal and a first output terminal. The first input terminal is coupled to the non-volatile memory cell by a first node, and configured to receive a first voltage. The first output terminal is configured to output the first output signal. The detection circuit is coupled to the comparator and the non-volatile memory cell. The detection circuit is configured to latch the first output signal and disrupt a current path between at least the non-volatile memory cell and the comparator. The detection circuit includes a first inverter coupled to the first output terminal of the comparator and configured to generate an inverted first output signal.


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