The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
Jan. 03, 2024
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventor:
Gu-Huan Li, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/0185 (2006.01); G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
H03K 19/018521 (2013.01); G11C 17/18 (2013.01);
Abstract
The present disclosure provides a semiconductor device and a bias voltage generator. The semiconductor device includes a voltage divider, a voltage selection circuit, and a level shifter. The voltage divider is configured to divide a power supply voltage to generate a first bias voltage. The voltage selection circuit is configured to select between the first bias voltage and a reference voltage to output a second bias voltage. The level shifter is configured to adjust a voltage level of the power supply voltage using the first bias voltage and the second bias voltage.