The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 19, 2024

Filed:

Jun. 21, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yue-Der Chih, Hsinchu, TW;

Cheng-Hsiung Kuo, Hsinchu County, TW;

Gu-Huan Li, Hsinchu County, TW;

Chien-Yin Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 5/02 (2006.01); G11C 7/20 (2006.01); G11C 11/16 (2006.01); G11C 11/406 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 7/20 (2013.01); G11C 5/02 (2013.01); G11C 11/1659 (2013.01); G11C 11/1677 (2013.01); G11C 11/406 (2013.01); G11C 13/0033 (2013.01); G11C 13/0064 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0076 (2013.01);
Abstract

A memory device for memory cell programming and erasing with refreshing operation is disclosed. The memory device includes multiple location-related memory cells and a refresh module. The location-related memory cells are coupled to a bit line on which a selecting voltage is applied. The refresh module rewrites a stored data of a first cell of the location-related memory cells to the first cell of the location-related memory cells in response to an operation count being smaller than a number N. N is related to the number of the location-related memory cells.


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