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For the Inventor, By the Inventor

Waldorf, MD, United States of America

Glenn Jernigan

USPTO Granted Patents = 9

Average Co-Inventor Count = 4.9

ph-index = 2

Forward Citations = 11(Granted Patents)


Company Filing History:

goldMedal9 out of 16,070 
 
USA As Represented by Secretary of the Navy
 patents

Years Active: 2013-2021

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9 patents (USPTO):Explore Patents
1. 11085830 - High speed graphene oxide bolometers and methods for manufacturing the same (2021-08-10),
2. 10686041 - Solid phase epitaxy of 3C-SiC on Si(001) (2020-06-16),
3. 9741921 - Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits (2017-08-22),
4. 9673047 - Solid phase epitaxy of 3C—SiC on Si(001) (2017-06-06),
5. 9063063 - Low-dimensional material chemical vapor sensors (2015-06-23),
6. 9028919 - Epitaxial graphene surface preparation for atomic layer deposition of dielectrics (2015-05-12),
7. 8920877 - Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics (2014-12-30),
8. 8669168 - Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride (2014-03-11),
9. 8518491 - Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics (2013-08-27),

Title: Glenn Jernigan: Innovator in Graphene Technology

Introduction

Glenn Jernigan is a prominent inventor based in Waldorf, MD (US), known for his significant contributions to the field of graphene technology. With a total of 9 patents to his name, Jernigan has made remarkable advancements in the development of bolometers and related manufacturing methods.

Latest Patents

Among his latest patents is the invention of high-speed graphene oxide bolometers and methods for manufacturing the same. This patent describes a bolometer that includes a substrate, a support structure comprising at least one SiGe layer and at least one Si layer, an absorber made of reduced graphene oxide, and a thermistor composed of partially reduced graphene oxide. Additionally, Jernigan has developed a patent for solid phase epitaxy of 3C-SiC on Si(001). This invention features a 3C-SiC buffer layer on Si(001) that includes a porous buffer layer produced through a solid-state reaction, with an amorphous carbon layer deposited by magnetron sputtering.

Career Highlights

Glenn Jernigan works for the United States Navy, where he has been instrumental in advancing research and development in his field. His innovative work has garnered attention and respect within the scientific community.

Collaborations

Jernigan has collaborated with notable colleagues, including Berend T Jonker and Nelson Garces, contributing to various projects that enhance the understanding and application of graphene technology.

Conclusion

Glenn Jernigan's work in graphene technology and bolometer development showcases his innovative spirit and dedication to advancing scientific knowledge. His contributions continue to impact the field significantly.

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