The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2017

Filed:

Nov. 16, 2016
Applicant:

The Government of the United States of America, As Represented BY the Secretary of the Navy, Washington, DC (US);

Inventors:

Xiao Liu, Fairfax, VA (US);

Daniel R. Queen, Silver Spring, MD (US);

Frances Hellman, Berkeley, CA (US);

Thomas H. Metcalf, Washington, DC (US);

Matthew R. Abernathy, Washington, DC (US);

Glenn G. Jernigan, Waldorf, MD (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01); H01L 39/02 (2006.01); C21D 1/773 (2006.01); C23C 14/06 (2006.01); C21D 1/40 (2006.01); C23C 14/14 (2006.01); C23C 14/54 (2006.01); C22C 45/00 (2006.01); H01B 19/04 (2006.01); H01B 3/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 39/2493 (2013.01); C21D 1/40 (2013.01); C21D 1/773 (2013.01); C22C 45/00 (2013.01); C23C 14/06 (2013.01); C23C 14/0605 (2013.01); C23C 14/0652 (2013.01); C23C 14/14 (2013.01); C23C 14/541 (2013.01); H01B 3/02 (2013.01); H01B 19/04 (2013.01); H01L 21/02112 (2013.01); H01L 21/02123 (2013.01); H01L 39/02 (2013.01); H01L 39/025 (2013.01); H01L 39/24 (2013.01); C21D 2201/03 (2013.01);
Abstract

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tunder high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.


Find Patent Forward Citations

Liu, Xiao. (2017). Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits (U.S. Patent No. 9741921). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9741921

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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