USA As Represented by Secretary of the Navy

Glenn Jernigan

Charles R Eddy, Jr

Berend T Jonker

David Kurt Gaskill

Virginia D Wheeler

Nelson Garces

Connie H Li

Ramasis Goswami

Carl S Hellberg

F Keith Perkins

Adam L Friedman

Xiao Liu

Paul M Campbell

Edward H Aifer

Thomas H Metcalf

Daniel R Queen

Jill A Nolde

Enrique Cobas

Douglas S Katzer

David F Storm

Steven C Binari

Matthew R Abernathy

Frances Hellman

Erin Cleveland

Bolometers and methods of forming the same are provided. A bolometer that includes a substrate, a support structure comprising at least one SiGe layer and at least one Si layer, an absorber comprising reduced graphene oxide, and a thermistor comprising partially reduced graphene oxide are described. Also described are methods for forming bolometers and the parts contained therein.

High speed graphene oxide bolometers and methods for manufacturing the same

A 3C&#x2014;SiC buffer layer on Si(001) comprising a porous buffer layer of 3C&#x2014;SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.

Solid phase epitaxy of 3C-SiC on Si(001)

A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tunder high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.

Hydrogen free amorphous silicon as insulating dielectric material for superconducting quantum bits

A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C&#x2014;SiC buffer layer on Si(001) comprising a porous buffer layer of 3C&#x2014;SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.

Solid phase epitaxy of 3C&#x2014;SiC on Si(001)

A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS, applying the monolayer flakes of MoSonto a SiO/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoSsensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS, trenches in the SiO/Si wafer, metal contacts in the trenches, and thereby resulting in a MoSsensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.

Low-dimensional material chemical vapor sensors

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-&#x3ba; oxide-based dielectric compounds such as AlO, HfO, TaO, or TiOare provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Epitaxial graphene surface preparation for atomic layer deposition of dielectrics

Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics

A method of preparing GaN material includes subjecting a GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of AlN to the GaN substrate, then growing GaN on the AlN layer by molecular beam epitaxy. This results in reduced concentrations of oxygen, carbon, and silicon impurities.

Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride

Growing community of inventors

Waldorf, MD, United States of America

Glenn Jernigan