logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10686041 B1

PDFFull Text
Date of Patent:
Jun. 16, 2020

Filed:

Apr. 06, 2017

Solid phase epitaxy of 3c-sic on si(001)

Applicant:

The Government of the United States of America, As Represented BY the Secretary of the Navy, Washington, DC (US);

Inventors:

Connie H. Li, Alexandria, VA (US);

Glenn G. Jernigan, Waldorf, MD (US);

Berend T. Jonker, Waldorf, MD (US);

Ramasis Goswami, Alexandria, VA (US);

Carl S. Hellberg, Bethesda, MD (US);

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy, Washington, DC (US);

Attorneys:

US Naval Research Laboratory

Stephen T. Hunnius

Primary Examiner:

Sue A Purvis

Assistant Examiner:

Scott Stowe

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02444 (2013.01); H01L 21/02447 (2013.01); H01L 21/02513 (2013.01); H01L 21/02529 (2013.01); H01L 21/02587 (2013.01); H01L 21/02592 (2013.01); H01L 21/02612 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 29/04 (2013.01); H01L 21/02527 (2013.01); H01L 29/045 (2013.01);
Abstract

A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.

Find Patent Forward Citations

Li, Connie. (2020). Solid phase epitaxy of 3c-sic on si(001) (U.S. Patent No. 10686041). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10686041

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…