The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Jun. 26, 2014
Nelson Garces, Alexandria, VA (US);
Virginia D. Wheeler, Alexandria, VA (US);
David Kurt Gaskill, Alexandria, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Glenn G. Jernigan, Waldorf, MD (US);
Nelson Garces, Alexandria, VA (US);
Virginia D. Wheeler, Alexandria, VA (US);
David Kurt Gaskill, Alexandria, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Glenn G. Jernigan, Waldorf, MD (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-κ oxide-based dielectric compounds such as AlO, HfO, TaO, or TiOare provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.