Company Filing History:
Years Active: 2013-2017
Title: Innovations of Nelson Garces
Introduction
Nelson Garces is a notable inventor based in Alexandria, VA, who has made significant contributions to the field of semiconductor technology. With a total of five patents to his name, Garces has focused on methods that enhance the control of III-N polarity in epitaxial layers. His work is crucial for advancing materials used in various electronic applications.
Latest Patents
Garces' latest patents include a method for vertical and lateral control of III-N polarity. This method involves depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate. It also includes depositing an AlN inversion layer on the open areas, removing any remaining mask, and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Additionally, the patent discloses methods for producing III-polar and N-polar materials on bulk III-N substrates, showcasing the versatility and innovation in his approach.
Career Highlights
Garces is currently employed at the USA as represented by the Secretary of the Navy. His role involves working on advanced materials and methods that are essential for the development of next-generation electronic devices. His expertise in semiconductor technology has positioned him as a key player in his field.
Collaborations
Some of Garces' notable coworkers include Charles R Eddy, Jr. and Virginia D Wheeler. Their collaboration has likely contributed to the innovative projects and patents that have emerged from their work environment.
Conclusion
Nelson Garces is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the control of III-N polarity. His contributions are vital for the future of electronic materials and devices.