USA As Represented by Secretary of the Navy

Nelson Garces

Charles R Eddy, Jr

David Kurt Gaskill

Virginia D Wheeler

Glenn Jernigan

Francis J Kub

Jennifer K Hite

Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.

Method for vertical and lateral control of III-N polarity

Processes for preparation of an epitaxial graphene surface to make it suitable for deposition of high-&#x3ba; oxide-based dielectric compounds such as AlO, HfO, TaO, or TiOare provided. A first process combines ex situ wet chemistry conditioning of an epitaxially grown graphene sample with an in situ pulsing sequence in the ALD reactor. A second process combines ex situ dry chemistry conditioning of the epitaxially grown graphene sample with the in situ pulsing sequence.

Epitaxial graphene surface preparation for atomic layer deposition of dielectrics

Preparation of epitaxial graphene surfaces for atomic layer deposition of dielectrics

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Alexandria, VA, United States of America

Nelson Garces