The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Jan. 09, 2013
Applicants:
David F. Storm, Waldorf, MD (US);
Douglas S. Katzer, Alexandria, VA (US);
Glenn G. Jernigan, Waldorf, MD (US);
Steven C. Binari, Annandale, VA (US);
Inventors:
David F. Storm, Waldorf, MD (US);
Douglas S. Katzer, Alexandria, VA (US);
Glenn G. Jernigan, Waldorf, MD (US);
Steven C. Binari, Annandale, VA (US);
Assignee:
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of preparing GaN material includes subjecting a GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of AlN to the GaN substrate, then growing GaN on the AlN layer by molecular beam epitaxy. This results in reduced concentrations of oxygen, carbon, and silicon impurities.