Waldorf, MD, United States of America

David F Storm


Average Co-Inventor Count = 5.1

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Waldorf, MD (US) (2014)
  • Washington, DC (US) (2019 - 2022)

Company Filing History:


Years Active: 2014-2022

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3 patents (USPTO):Explore Patents

Title: David F Storm: Innovator in Gallium Nitride Technology

Introduction

David F Storm is a notable inventor based in Waldorf, MD (US). He has made significant contributions to the field of gallium nitride technology, holding a total of 3 patents. His work focuses on the development of advanced light-emitting devices that have a wide range of applications.

Latest Patents

One of his latest patents involves gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures. This innovation addresses the generation of holes in gallium nitride-based devices that lack p-type doping. The technology is applicable in light-emitting diodes and lasers, both edge-emitting and vertical-emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted, from near-infrared to mid-ultraviolet, depending on the design of the adjacent cross-gap recombination zone. This innovation also provides for novel circuits and unique applications, particularly in water sterilization.

Career Highlights

David F Storm has worked with prominent institutions, including Wright State University and the United States Navy. His experience in these organizations has contributed to his expertise in gallium nitride technology and its applications.

Collaborations

Some of his notable coworkers include Elliott R Brown and Weidong Zhang. Their collaboration has likely enhanced the development and implementation of innovative technologies in their respective fields.

Conclusion

David F Storm's contributions to gallium nitride technology exemplify the impact of innovation in modern science. His patents and collaborations reflect a commitment to advancing technology for practical applications.

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