USA As Represented by Secretary of the Navy

Wright State University

Ohio State Innovation Foundation

David F Storm

Paul Berger

David J Meyer

Elliott R Brown

Weidong Zhang

Tyler Growden

Glenn Jernigan

Steven C Binari

Douglas S Katzer

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures

A method of preparing GaN material includes subjecting a GaN substrate to at least two cycles of Ga deposition and desorption, then applying a layer of AlN to the GaN substrate, then growing GaN on the AlN layer by molecular beam epitaxy. This results in reduced concentrations of oxygen, carbon, and silicon impurities.

Method for reducing the concentration of oxygen, carbon, and silicon impurities on nitrogen-polar surfaces of gallium nitride

Growing community of inventors

Waldorf, MD, United States of America

David F Storm