The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 24, 2022

Filed:

Oct. 28, 2019
Applicants:

Wright State University, Dayton, OH (US);

The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);

Ohio State Innovation Foundation, Columbus, OH (US);

Inventors:

Elliott R. Brown, Beavercreek, OH (US);

Weidong Zhang, Cary, NC (US);

Tyler Growden, Dublin, OH (US);

Paul Berger, Columbus, OH (US);

David Storm, Washington, DC (US);

David Meyer, Washington, DC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01L 33/06 (2010.01); H01L 29/88 (2006.01); H01L 33/32 (2010.01); H01S 5/343 (2006.01); H01S 5/14 (2006.01); H01S 5/187 (2006.01); H01S 5/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); C02F 1/32 (2006.01); H01L 29/20 (2006.01); H01S 5/042 (2006.01); H01L 33/50 (2010.01); H01S 5/183 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); C02F 1/325 (2013.01); H01L 29/2003 (2013.01); H01L 29/882 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01S 5/0213 (2013.01); H01S 5/0425 (2013.01); H01S 5/141 (2013.01); H01S 5/187 (2013.01); H01S 5/3401 (2013.01); H01S 5/34333 (2013.01); C02F 2201/3222 (2013.01); C02F 2201/3228 (2013.01); C02F 2303/04 (2013.01); H01L 33/50 (2013.01); H01S 5/18341 (2013.01); H01S 5/18369 (2013.01); H01S 5/3095 (2013.01); H01S 2304/02 (2013.01); H01S 2304/04 (2013.01);
Abstract

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.


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