The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Oct. 01, 2015
Connie H. LI, Alexandria, VA (US);
Glenn G. Jernigan, Waldorf, MD (US);
Berend T. Jonker, Waldorf, MD (US);
Ramasis Goswami, Alexandria, VA (US);
Carl S. Hellberg, Bethesda, MD (US);
Connie H. Li, Alexandria, VA (US);
Glenn G. Jernigan, Waldorf, MD (US);
Berend T. Jonker, Waldorf, MD (US);
Ramasis Goswami, Alexandria, VA (US);
Carl S. Hellberg, Bethesda, MD (US);
The United States of America, as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method of making a SiC buffer layer on a Si substrate comprising depositing an amorphous carbon layer on a Si(001) substrate, controlling the thickness of the amorphous carbon layer by controlling the time of the step of depositing the amorphous carbon layer, and forming a deposited film. A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si substrate wherein the porous buffer layer is produced through a solid state reaction.