Munich, Germany

Gerald R Friese


Average Co-Inventor Count = 4.3

ph-index = 6

Forward Citations = 275(Granted Patents)


Location History:

  • Fishkill, NY (US) (2002 - 2004)
  • München, DE (2003 - 2004)
  • Munich, DE (2005 - 2010)

Company Filing History:


Years Active: 2002-2010

where 'Filed Patents' based on already Granted Patents

13 patents (USPTO):

Title: Gerald R. Friese: Innovator in Semiconductor Technology

Introduction

Gerald R. Friese is a prominent inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 13 patents. His innovative work has paved the way for advancements in various electronic components.

Latest Patents

Among his latest patents is the development of MIM capacitors with a catalytic activation layer. This invention includes a first insulating layer formed over a wafer, with a first capacitor plate situated within this layer. The design further incorporates a second insulating layer, a capacitor dielectric, and a second capacitor plate, all contributing to enhanced performance. Another notable patent is the method and apparatus for stress relief in semiconductor structures. This invention addresses the challenges of relieving stress in via structures, ensuring reliability in semiconductor applications.

Career Highlights

Gerald has worked with leading companies in the technology sector, including Infineon Technologies AG and IBM. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking projects in semiconductor technology.

Collaborations

Throughout his career, Gerald has collaborated with notable professionals such as Hans-Joachim Barth and Erdem Kaltalioglu. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Gerald R. Friese's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in electronic components and systems.

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