The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2002
Filed:
Jan. 30, 2001
Infineon Technologies AG, Munich, DE;
Abstract
A method of making a metal-insulator-metal (MIM) capacitor ( ) having self-passivating plates ( ). A liner ( ) is deposited on a workpiece ( ) and dielectric ( ). A conductive layer ( ) is deposited and annealed to form dopant-rich region ( ). Insulating region ( ) is formed on exposed portions of dopant-rich region ( ) by exposure to atmosphere or oxygen. Capacitor dielectric layer ( ) is disposed over the first capacitive plate ( ). A second capacitive plate ( ) is formed over the first capacitive plate ( ) and capacitor dielectric layer ( ). The second capacitive plate ( ) is annealed to form dopant-rich region ( ) and exposed to atmosphere or oxygen to form insulating region ( ). Optional seed layer ( ) may be deposited prior to the formation of the first capacitive plate ( ).