The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2008
Filed:
Aug. 23, 2005
Hans-joachim Barth, Munich, DE;
Petra Felsner, Munich, DE;
Erdem Kaltalioglu, Hsin-Chu, TW;
Gerald R. Friese, Munich, DE;
Hans-Joachim Barth, Munich, DE;
Petra Felsner, Munich, DE;
Erdem Kaltalioglu, Hsin-Chu, TW;
Gerald R. Friese, Munich, DE;
Infineon Technologies AG, Munich, DE;
Abstract
A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bottom plate. The insulating layer is patterned with a MIM capacitor top plate pattern, and a MIM dielectric material is deposited over the patterned insulating layer. A conductive material is deposited over the MIM dielectric material, and the wafer is planarized to remove the conductive material and MIM dielectric material from the top surface of the insulating layer and form a MIM capacitor top plate. A second cap layer is selectively formed over the MIM capacitor top plate.