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For the Inventor, By the Inventor

Stormville, NY, United States of America

Gary Bela Bronner

USPTO Granted Patents = 83



Average Co-Inventor Count = 3.7

ph-index = 24

Forward Citations = 1,791(Granted Patents)

DiyaCoin DiyaCoin = 0.61 


Inventors with similar research interests:


Location History:

  • Mount Kisco, NY (US) (1991 - 1994)
  • Mt. Kisco, NY (US) (1992 - 1994)
  • Westchester County, NY (US) (1996)
  • Dutchess County, NY (US) (1997)
  • Stormville, NY (US) (1996 - 2013)

Company Filing History:

goldMedal75 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal1 out of 244 
 
Infineon Technologies North America Corp.
 patents
bronzeMedal1 out of 1 
 
International Business Machines Coirporation
 patent
4. 1 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents
5. 1 out of 19 
 
Siemens Microelectronics Limited
 patents
6. 1 out of 30,028 
 
Siemens Aktiengesellschaft
 patents
7. 1 out of 413 
 
Siemens Corporation
 patents
8. 5 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1991-2013

where 'Filed Patents' based on already Granted Patents

83 patents (USPTO):
1. 8614485 - Process for fabrication of FINFETs (2013-12-24),
2. 8039888 - Conductive spacers for semiconductor devices and methods of forming (2011-10-18),
3. 7759188 - Method of fabricating vertical body-contacted SOI transistor (2010-07-20),
4. 7737502 - Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI sructure with elevated source/drain (2010-06-15),
5. 7470570 - Process for fabrication of FinFETs (2008-12-30),
6. 7439568 - Vertical body-contacted SOI transistor (2008-10-21),
7. 7129130 - Out of the box vertical transistor for eDRAM on SOI (2006-10-31),
8. 7037794 - Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain (2006-05-02),
9. 7009237 - Out of the box vertical transistor for eDRAM on SOI (2006-03-07),
10. 6974991 - DRAM cell with buried collar and self-aligned buried strap (2005-12-13),
11. 6808981 - Method for fabricating 6F2 trench DRAM cell with double-gated vertical MOSFET and self-aligned STI (2004-10-26),
12. 6767789 - Method for interconnection between transfer devices and storage capacitors in memory cells and device formed thereby (2004-07-27),
13. 6759291 - Self-aligned near surface strap for high density trench DRAMS (2004-07-06),
14. 6727141 - DRAM having offset vertical transistors and method (2004-04-27),
15. 6656807 - Grooved planar DRAM transfer device using buried pocket (2003-12-02),

Sure, let's create an article about inventor Gary Bela Bronner based on the provided data.

**Title: Unveiling the Innovations of Gary Bela Bronner**

Introduction: Gary Bela Bronner, a visionary inventor based in Stormville, NY, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 83 patents, Bronner has revolutionized the fabrication processes of FinFETs and conductive spacers, showcasing his expertise and ingenuity in the industry.

Latest Patents:

1. *Process for fabrication of FINFETs*: Bronner's innovative method for fabricating FinFETs on a semiconductor substrate improves gate width control and reduces variation across the surface. By utilizing a modified sidewall image transfer process and a high-density bottom-up oxide fill, he has enhanced the efficiency and precision of FinFET production.

2. *Conductive spacers for semiconductor devices*: Bronner's method of forming conductive spacers on semiconductor devices involves depositing a polysilicon layer, implanting dopant ions, and creating a metal silicide-based conductive spacer. This technique underscores his commitment to advancing semiconductor technology.

Career Highlights: Bronner has held key positions at renowned companies like IBM, where his expertise and innovative mindset have been instrumental in driving technological advancements. His leadership and dedication to research and development have earned him recognition as a pioneer in the semiconductor industry.

Collaborations: Collaborating with esteemed colleagues such as Jack Allan Mandelman and Carl John Radens, Bronner has fostered a culture of innovation and excellence. Together, they have pushed the boundaries of semiconductor technology, paving the way for groundbreaking inventions and solutions.

Conclusion: Gary Bela Bronner's relentless pursuit of innovation and commitment to excellence have solidified his reputation as a trailblazer in the field of semiconductor technology. His groundbreaking patents and collaborative spirit continue to inspire the next generation of inventors and shape the future of the industry.

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